Gate-All-Around (GAA)

Gate-All-Around (GAA) is a transistor architecture that overcomes the challenges of the FinFET architecture. GAA takes the FinFET design and turns it sideways so that the channels are horizontal instead of vertical. Instead of surrounding the channel on three sides as in the FinFET architecture, GAA surrounds it on all four sides, to allow better control of the transistor switch. A new set of very precise processes are used to fabricate GAA transistors. This supports transistor scaling with lower variability, and increased performance and lower power.

Gate-All-Around borrows many of the proven processes used to make FinFETs. However, there are several critical new steps, including epitaxy, selective removal, integrated materials solutions and E-beam metrology. 

More information on GAA transistors can be found on our Master Class and blogs.