AKT^™ 55KS PECVD

Applied’s new AKT 55KS PECVD system brings market-leading precision plasma-enhanced chemical vapor deposition (PECVD) technology to 2200mm x 2500mm size substrates. It deposits a dielectric-layer interface for metal oxide (MOx) transistors with a new advanced-quality silicon oxide (SiO2) process that minimizes hydrogen impurities to improve long-term transistor stability and optimize screen performance. By maintaining the uniformity performance and particle control required to achieve high production yields, the AKT-55KS PECVD system enables fast start up for manufacturing high-quality MOx displays.