Ion Implant

Ion implantation (a form of doping) is integral to integrated circuit manufacturing. As the complexity of chips has grown, so has the number of implant steps. Today, a CMOS integrated circuit with embedded memory may require up to 60 implants.

Applied’s portfolio comprises the four types of implant systems common in the industry. Three of these are line-of-sight beam line systems: high-current (for low-energy and/or high-dose applications); medium-current (for lower doses); high-energy (for very deep implants). The fourth uses plasma doping for applications requiring exceptionally high doses or conformal doping of regions that cannot be reached with the line-of-sight beam line systems (e.g., sidewall doping in three-dimensional fin field effect transistors). These systems deliver leading-edge beam angle control, dose control, uniformity, and wafer-to-wafer repeatability.