PROVision^® 3E EBeam Metrology

As semiconductor features continue scaling and device architectures become denser and more complex, fabrication processes involve more steps and process control limits become tighter. Traditional optical metrology is leading to measurement deficiencies that are making it more difficult to correlate intended patterns with on-die results. As a result, today’s leading-edge chip designs require a new class of metrology that goes beyond optical target-based approximation, statistical sampling, and single-layer control.

The PROVision 3E system combines nanometer resolution, high speed, and through-layer imaging to produce the millions of datapoints needed to correctly pattern today’s most advanced designs, including 3nm foundry-logic chips, GAA transistors, and next-generation DRAM and 3D NAND. With these capabilities, it sees beyond the blind spots of optical metrology, performing accurate measurements across the wafer and between the many layers of a chip to generate the multidimensional data sets needed to achieve the best chip performance and accelerate time to market.