The UVision 4 system’s extendable architecture of high-power polarized deep ultra-violet laser, optimized scattered light collection, and advanced noise reduction capabilities, addresses the inspection challenges of 32nm and below with optical inspection capabilities beyond the resolution limits of conventional brightfield (BF) inspection.
This system is the newest innovation in wafer inspection, serving the full range of front-end-of-line and lithography to back-end-of-line applications. The UVision 4 system combines enhanced sensitivity and productivity with ease of use in a powerful, versatile solution for the most advanced patterning challenges at the best cost of ownership of any BF inspection tool on the market.
Enhanced light intensity, optimized scattered light collection [i.e., greyfield (GF)] together with the industry’s smallest GF pixel size and suite of noise reduction capabilities raise performance to a new level. These sensitivity enhancements enable the UVision 4 to detect ultra-small defects of sizes and types undetectable by previous technology. UVision 4 performs simultaneous BF and GF inspection with throughput up to 35% higher than that of its predecessor.
Advanced noise reduction techniques optimize localized detection sensitivity. Innovative algorithms enable simultaneous detection of systematic mask induced defects (i.e., "haze" defects) and random defects at production worthy throughput made possible by an enhanced image processor. Wide dynamic range detection schemes eliminate the multiple region-specific scans previously required, enabling regions of a chip with differing contrasts to be imaged with optimal sensitivity in a single pass without compromising throughput.
Enhanced Capture Rate for Haze Defects in Production Wafer Inspection (758KB, PDF)*
Advanced Lithography - Wafer Defect Scattering Analysis at DUV (227KB, PDF)*
*SPIE.org |
