Applied Producer® eHARP™ (enhanced High Aspect Ratio Process) is a new non-plasma based CVD (chemical vapor deposition) oxide film that addresses the stringent gap fill requirements for shallow trench isolation (STI) unit processes at next-generation geometries.
The new eHARP film improves upon the first-generation HARP film gap fill capability by introducing water vapor to the TEOS/ozone chemistry during the deposition process. This results in a more tightly packed, denser film that enables seamless, void-free gap fill in features with aspect ratios >12:1. eHARP is proven for 32nm logic gap fill and applications in 4Xnm devices, which address vertical profiles and designs with complex 3D island features. eHARP is the first CVD solution qualified for STI fill at 4Xnm flash.
eHARP’s TEOS/ozone based processes also enhance transistor performance by depositing strain inducing films that can significantly increase transistor drive current in logic devices and retention times in memory devices, with minimal integration complexity or cost. These strain engineering benefits are additive when used with other strain inducing films, such as Stress Nitride and selective epitaxy. The non-plasma deposition process also eliminates plasma damage, which boosts device reliability.
The Applied eHARP film is available on the production-proven, high-throughput, Producer platform that can process up to six wafers simultaneously in three Twin Chambers. Reduced use of consumables and shorter overall clean time complement the platform’s superior productivity and system reliability, resulting in low cost of ownership. Platform extendibility enables customers to leverage the Producer toolset for multiple process nodes. |
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