Chemical Mechanical Planarization (CMP) is a process that uses an abrasive, corrosive slurry to physically grind flat and chemically remove the microscopic topographic features on a wafer so that subsequent processes can begin from a flat surface.

Electrochemical Mechanical Planarization (Ecmp) technology uses a unique electrochemical method to planarize copper at a high rate with ultra-low downforce to produce a very smooth topography without damaging fragile dielectric films.